基于等价掺杂转换理论的应用 ,得到了解析计算非对称线性缓变 P- N结击穿特性 .由于非对称线性缓变 P-N结是单扩散 P- N结的一个恰当近似 ,因而 ,研究其击穿特性可以更好地理解和设计功率器件 P- N结的终端结构 .运用等价掺杂转换方法的基本理论得到了不同扩散掺杂梯度和衬底浓度组合系列的击穿电压 .研究了最大耗尽层宽度在扩散侧和衬底侧的扩展 ,给出了它们随扩散掺杂梯度和衬底浓度组合的变化而出现的不同特点 .本方法预言的最大击穿电压较之单纯的突变结和对称线性缓变 P- N结更接近文献报道的结果 ,显示了等价掺杂转换理论的理论计算非对称线性缓变 P- N结击穿电压的有效性 Based on the application of the equivalent doping conversion theory, the asymmetric linearly graded P-N junction breakdown is obtained.As the asymmetric linearly graded PN junction is a proper approximation of the single-diffused P-N junction, Its breakdown characteristics can better understand and design the terminal structure of P-N junction of power devices.The breakdown voltage of different combination of diffusion doping gradient and substrate concentration is obtained by using the basic theory of equivalent doping conversion method. The maximum depletion layer width spreads on the diffuser side and the substrate side, and gives their different characteristics as a function of diffusion doping gradient and substrate concentration variation.The maximum breakdown voltage predicted by this method is higher than pure Mutation and symmetry linearly-graded P-N junctions are closer to those reported in the literature and show the validity of the theoretical calculation of asymmetric linearly graded P-N junction breakdown voltages for the equivalent doping conversion theory