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Diamond single crystal was epitaxially grown on the surface of diamond seeds with rough planes at high pressure and high temperature (HPHT) conditions .Fe80Ni20alloy powder was used as catalyst / solvent and natural flake-like graphite was used as carbon source . Diamond single crystals were grown on the diamond seeds at 4 .8 GPa and 1500 K . The morphology of the samples was observed by SEM . The mechanism of diamond growth with smooth planes from original seed with rough planes was studied .