Indium doped ZnS(ZnS:In) films were prepared on glass substrate using thermal evaporation technology.Itwasfoundthatthestructural,opticalandelectricalpropertiesofZnS:Infilmsstronglydependonthesubstrate temperature(Ts). By X-ray diffraction(XRD),atomic force microscopy(AFM),transmittance spectroscopy,and electric performance measurements,the effect of Tson ZnS:In film is studied in detail. It reveals that Tshas important effect on ZnS grain size,crystallinity,lattice disorder,etc.,which further leads to the obvious influence on its optical and electrical performance. Under the optimized Ts,the performance,especially the conductivity,achieved in this work is far higher than that reported for other n-type ZnS films. By X-ray diffraction (XRD), atomic force microscopy (AFM), transmittance spectroscopy, and electric field measurements were performed on a glass substrate using thermal evaporation technology performance measurements, the effect of Tson ZnS: In film is studied in detail. It reveals that Tshas important effect on ZnS grain size, crystallinity, lattice disorder, etc., which further leads to the obvious influence on its optical and electrical performance. Under the optimized, especially the conductivity, achieved in this work is far higher than that reported for other n-type ZnS films.