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结合混合微波集成电路(HMIC)工艺和砷化镓单片微波集成电路(MMIC)工艺各自优势,设计制作了一款小型化大功率S波段平衡式限幅MMIC低噪声放大器。采用平衡式结构,提高了限幅功率容量和可靠性。由于金丝键合线的等效电感具有更高Q值,低噪声放大器单片的输入匹配采用外部金丝键合线匹配,有效降低了低噪声放大器单片的噪声系数。限幅器采用混合集成工艺制成,能够耐受较大功率。利用微波仿真软件,设计制作了兰格(Lange)电桥、限幅电路和低噪声放大器输入匹配等电路。最终产品尺寸仅为22 mm×16 mm×6 mm,在2.7~3.5 GHz内增益27~28 d B,噪声系数小于1.3 d B,驻波比小于1.3,该平衡限幅MMIC低噪声放大器可承受功率超过200 W、占空比为15%的脉冲功率冲击。
Combining the advantages of hybrid microwave integrated circuit (HMIC) process and gallium arsenide monolithic microwave integrated circuit (MMIC) process, a miniaturized high power S-band balanced limiting MMIC LNA was designed and fabricated. Balanced structure improves limited power capacity and reliability. Due to the higher Q of the equivalent inductance of the gold wire bond, the input matching of the low noise amplifier monolithic uses an external gold wire bond wire to effectively reduce the noise figure of the low noise amplifier monolithic chip. Limiters are manufactured using a hybrid integrated process that can withstand high power. Using microwave simulation software, Lange bridge, limiting circuit and low noise amplifier input matching circuit are designed. The final product size is only 22 mm × 16 mm × 6 mm, with a gain of 27-28 d B at 2.7-3.5 GHz, a noise figure of less than 1.3 d B and a VSWR of less than 1.3. This balanced-amplitude MMIC LNA tolerates Pulsed power surge of more than 200 W and duty cycle of 15%.