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杂质分布分析是研究半导体材料与器件的一个重要环节。本文介绍了一种精确而易于使用的联机测量仪器,用这种仪器能够测量完成器件(即使已封装)或材料切片的杂质分布,掺杂浓度分布(N对w)直接描绘在X—Y记录仪上。对于一给定器件仪器不需改变标准即可测量到三个数量级的掺杂浓度变化。这种仪器工作的物理原理简单,但电子装置复杂。仪器的关键部分是工作在1兆的精密自动电容测量网络。在二极管上同时加以扫描直流偏压与可控交流“抖动”信号,即在电容测量网络产生分别正比于C与dc/dv的直流和交流输出信号。这些
Impurity distribution analysis is to study semiconductor materials and devices is an important part. This article describes an accurate and easy-to-use on-line measuring instrument that can measure the distribution of impurities in a finished device (even encapsulated) or in material slices. The doping concentration profile (N vs. W) Instrument. Three orders of magnitude doping concentration changes can be measured without changing the standard for a given device. The physical principle of this instrument work is simple, but the complexity of electronic devices. The key part of the instrument is a precision auto-capacitance measuring network operating at 1 megabit. In the diode at the same time be scanned DC bias and controllable AC “jitter” signal, that is, in the capacitance measurement network are proportional to C and dc / dv DC and AC output signals. These ones