论文部分内容阅读
使用具有不同有效质量的一维多阶梯势透射系数的递推计算公式 ,可以方便地计算任意形状的一维分区位势的透射系数。给出了几种位势的透射系数随入射粒子能量变化的曲线 ,研究了谐振隧穿现象。对半导体材料GaAlAs/GaAs/GaAlAs的谐振隧穿现象进行了较详细的讨论。计算结果表明 ,对于两对称方势垒夹一个任意形状势阱的位势 ,也可能存在谐振隧穿现象
Using the recursive formulas of one-dimensional multi-step potential transmission coefficients with different effective masses, the transmissivity of a one-dimensional zonal potential in any shape can be conveniently calculated. The curves of the transmission coefficients of several kinds of potential with the variation of the incident particle energy are given, and the resonant tunneling phenomenon is studied. The resonant tunneling phenomenon of GaAlAs / GaAs / GaAlAs semiconductor materials is discussed in more detail. The calculation results show that there is also the possibility of resonant tunneling for the potential of an arbitrary shape potential well of two symmetric square barriers