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提出了用于高频电力线路中的一种大功率软恢复二极管新结构。该二极管阳极由低注入效率的ｐ区及高注入效率的ｐ＋区组成。大电流下ｐ＋区的高注入效率使二极管正向压降显著降低，而在换向时，ｐ区的低注入效率又能使反向峰值电流显著下降，反向电流衰减明显变软。阴极是采用理想欧姆接触结构，同时为电子和空穴提供抽取通道，大大降低了反向恢复时间。采用传统功率半导体器件的常规工艺，做出了反向恢复软度因子ｔＢ／ｔＡ最大，ｄｉ（ｒｅｃ）／ｄｔ最小的大功率二极管。测试证明其电气特性优于国内外同类型的大功率二极管。
A new structure of high power soft recovery diode for high frequency power line is proposed. The diode anode consists of a p region of low implantation efficiency and a p + region of high implantation efficiency. The high injection efficiency of p + region at high current significantly reduces the forward voltage drop of the diode, while at the commutation, the low injection efficiency of p region significantly decreases the reverse peak current and the reverse current decay obviously softens. Cathode is the ideal ohmic contact structure, while providing extraction channels for electrons and holes, greatly reducing the reverse recovery time. The traditional power semiconductor devices using the conventional process, made the reverse recovery of soft-tB / tA maximum, di (rec) / dt of the smallest high-power diodes. Test proved that its electrical characteristics better than the same type of high-power diodes at home and abroad.