A novel vertical graded source tunnel field-effect transistor (VGS-TFET) is proposed to improve device performance.By introducing a source with linearly graded
Graphene plasmons have become promising candidates for deep-subwavelength nanoscale optical devices due to their strong field confinement and low damping.Among
The Goos-H?nchen(GH)shift of graphene in the terahertz frequency range is investigated,and an extremely high GH shift is obtained owing to the excitation of sur