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本文用俄歇电子能谱和扫描电子显微镜等方法研究了p-InP与Au-Zn,Ti/Au,Pd/Au和Ti/Pd/Au接触在热处理过程中的互扩散现象.结果表明:Au较Ti、Pd易向p-InP内扩散。研究了 p-InP/Au-Zn体系的合金化条件对比接触电阻(ρ_c)的影响。在 450℃热处理1—2 min或在 350℃热处理30 min,均可得到较低的比接触电阻,这表明界面处的互扩散“程度”是决定比接触电阻的重要因素。Au-Zn合金在蒸发和热处理的过程中,Zn趋向于“凝集”在最表面层,而不能充分发挥它在InP中的受主作用,这是该体系的ρ_c值偏高的原因之一。
The interdiffusion of p-InP with Au-Zn, Ti / Au, Pd / Au and Ti / Pd / Au during heat treatment was investigated by Auger electron spectroscopy and scanning electron microscopy. Than Ti, Pd is easy to p-InP diffusion. The effect of alloying conditions on the contact resistance (p_c) of the p-InP / Au-Zn system was investigated. A lower specific contact resistance is obtained by heat treatment at 450 ° C for 1-2 min or at 350 ° C for 30 min, indicating that the degree of interdiffusion at the interface is an important factor in determining the contact resistance. In the process of evaporation and heat treatment, Zn tends to “agglomerate” at the outermost layer and can not fully exert its acceptor effect in InP. This is one of the reasons why the ρ_c value of the Au-Zn alloy is too high.