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本文介绍了一种对双向S型负阻器件（BNRD）进行二维数值模拟的方法．并用此方法模拟得出了器件的Ⅰ－Ⅴ曲线及截止状态和导通状态下器件的内部电位分布、电子空穴浓度分布和电流密度分布．由此可以更清楚地了解器件的工作机理．此外还对不同结构、工艺参数的BNRD进行了模拟，总结出了器件结构、工艺参数对器件电学特性的影响关系．
This paper presents a method of two-dimensional numerical simulation of bidirectional S-type negative resistance devices (BNRD). The I-V curve of the device and the internal potential distribution, the electron-hole concentration distribution and the current density distribution of the device in the off-state and the on-state are simulated by this method. This can be a clearer understanding of the working mechanism of the device. In addition, the BNRD of different structures and process parameters are also simulated, and the relationship between device structure and process parameters on the electrical characteristics of the device is summarized.