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P-type undoped freestanding diamond(FSD)films were grown by the microwaveplasma chemical vapor deposition(MPCVD)method.The effects of the hydrogen plasma treatmentand annealing process on the p-type behavior of FSD films were investigated by the Halleffect method.The results revealed that the sheet carrier concentration increased and the sheetresistivity decreased with the treating time and a stable value was achieved after a period of time.Up to an annealing temperature of 250℃,the sheet resistivity and sheet carrier concentrationremained in a relatively stable range but changed dramatically after annealing at 300℃.A heterojunctionwas also fabricated by the growth of an n-type ZnO film on the p-type FSD film.Current-voltage(I-V)characterization of the heterojunction at room temperature indicated thatthis structure was rectifying in nature with a turn-on voltage of about 0.6 V.
P-type undoped freestanding diamond (FSD) films were grown by the microwave plasma imaging (MPCVD) method. The effects of the hydrogen plasma treatment and annealing process on the p-type behavior of FSD films were investigated by the Halleffect method. revealed that the sheet carrier concentration increased and the sheetresistivity decreased with the treating time and a stable value was achieved after a period of time. Up to an annealing temperature of 250 ° C, the sheet resistivity and sheet carrier concentration fixed in a relatively stable range but changed dramatically after annealing at 300 ° C. A heterojunctionwas also fabricated by the growth of an n-type ZnO film on the p-type FSD film. Current-voltage (IV) characterization of the heterojunction at room temperature indicated thatthis structure was rectifying in nature with a turn-on voltage of about 0.6 V.