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本文分析了场发射阴极真空微电子三极管的增益-带宽乘积。利用Fowler-Nordheim场发射方程计算了三极管的跨导gm,根据三极管的几何结构估算了电容。场发射锥尖采用合理的几阿结构达到了GHz范围的截止频率,这低于Ⅲ-Ⅴ半导体器件所能达到的截止频率。据报道,利用典型的场发射极电流-电压关系可达到MHz范围的截止频率。随着固态器件尺寸的减小和截止频率的不断提高,使其增益-带宽和截止频率f_T与真空器件的日益接近。
This article analyzes the gain-bandwidth product of a field-emission cathode vacuum microelectronics triode. The transconductance gm of the transistor is calculated using the Fowler-Nordheim field emission equation, and the capacitance is estimated from the transistor geometry. The field emission cone tip achieves a cutoff frequency in the GHz range with a reasonable AlGaAs structure, which is less than the cut-off frequency achieved by III-V semiconductor devices. It is reported that the cut-off frequency in the MHz range can be achieved using typical field emitter current-voltage relationships. As the size of solid-state devices decreases and the cut-off frequency increases, their gain-bandwidth and cut-off frequency, f_T, are increasingly approaching those of vacuum devices.