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在半绝缘衬底上采用分子束外延(MBE)技术已得到e-b结是突变的GaAlAs-GaAs异质结双极晶体管(HBT)。在I_C=20mA、V_(CE)=8V下已测出增益带宽积f_T为15GHz。在至今HBT的报导中这结果是最好的。它用于高速逻辑线路是很有希望的。
The ablated GaAlAs-GaAs heterojunction bipolar transistor (HBT) has been obtained using molecular beam epitaxy (MBE) technology on semi-insulating substrates. At I_C = 20mA, V_ (CE) = 8V, the gain-bandwidth product f_T has been measured at 15GHz. This result is best seen in HBT reports so far. It is promising for high-speed logic.