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使Si-SiO_2台阶上的铝膜互连经受-55°至+150℃的1500次温度循环,并用扫描电子显微镜检验Si-SiO_2台阶附近的铝膜。观察了晶粒界面的滑移、细槽和条痕。观察表明,铝膜失效引起的失效机理与一些人观察的大多数样品是类似的。
The aluminum film interconnects on Si-SiO 2 steps were subjected to 1,500 temperature cycles of -55 ° to + 150 ° C and the aluminum film near the Si-SiO 2 steps was examined by a scanning electron microscope. The slip, groove and streaks of the grain boundaries were observed. The observation shows that the failure mechanism caused by the failure of the aluminum film is similar to most samples observed by some people.