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提出一种基于SOI-MEMS技术的静电驱动-电容敏感检测的横向硅谐振器,对其进行设计、MEMS工艺加工制作实现、微弱电容检测及开环测试.该新型静电激励谐振器结构主要包含一个从中间受力点向两侧引出两个电极板的双端固支梁,这种设计使得此谐振器的静电驱动电压远小于具有相同电极板面积和极板间距的同类静电驱动谐振器,且检测电容更大,降低了检测难度.以器件层电阻率很低(0.001～0.002Ω·bcm)的SOI晶圆为基础材料,其SOI-MEMS加工工艺流程简单,仅需要2块掩膜版,有4个主要单步工艺.实验测试结果表明:在真空度为0.1～1.0 Pa环境下,直流偏置电压低至30 V,交流驱动电压峰-峰值为20 mV时,该谐振器在其谐振频率点52 261.99 Hz处的Q值依然高于11 800.
An electrostatic drive-capacitance-sensitive lateral silicon resonator based on SOI-MEMS technology is proposed, which is designed, fabricated and fabricated by MEMS technology, weak capacitance detection and open-loop test.The structure of the new electrostatic excitation resonator mainly consists of one The double-ended anchorage of the two electrode plates leads from the middle force point to both sides. This design allows the electrostatic drive voltage of this resonator to be much smaller than the same type of ESD driven resonator with the same electrode plate area and plate spacing, and The detection capacitance is larger and the detection difficulty is reduced.With SOI wafer with low resistivity (0.001 ~ 0.002Ω · bcm) as the base material, the SOI-MEMS processing process is simple and requires only two mask plates, The experimental results show that the DC bias voltage is as low as 30 V and the peak-to-peak value of AC driving voltage is 20 mV when the vacuum degree is 0.1-1.0 Pa, The Q at 261,299.99 Hz is still above 11,800.