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针对不能在片测量的光探测器芯片,本文提出了一个简单而有效的实验方案来提取其等效电路模型的高频电参量.首先设计了和微波探针匹配的共面波导微带线,测量其输出反射系数,测试结果与理论设计符合很好;然后将芯片装载到微带线上,测量包含光探测器的整个测试结构的输出反射系数.仿真中涉及光探测器测试结构的等效电路模型,包含光探测器、键合金丝和共面波导微带线等因素.通过拟合已测的整个测试结构的输出反射系数,提取了光探测器的高频电参量.
Aiming at the photodetector chip which can not be measured in the chip, a simple and effective experimental scheme is proposed to extract the high-frequency electrical parameters of the equivalent circuit model.First, a coplanar waveguide microstrip line matched with the microwave probe is designed, Measuring the output reflection coefficient, the test result is in good agreement with the theoretical design; and then the chip is loaded on the microstrip line to measure the output reflection coefficient of the entire test structure including the photodetector. The simulation involves the equivalence of the photodetector test structure The circuit model includes photodetectors, bonding wires, and coplanar waveguide microstrip lines, etc. The high-frequency electrical parameters of the photodetector are extracted by fitting the measured output reflectance of the entire test structure.