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日本索尼中央研究所用有机化合物热分解反应的气相生长法,制成了在可见光区可获得室温连续振荡的半导体激光器.室温连续振荡的最短波长为760nm.晶体的生长,是采用三甲基镓[TMG]、三甲基铝[TMA]、AsH_3的热分解反应来进行的.衬底是掺Te的GaAs.衬底温度大约为700℃,以大约0.2μm/分的生长速度进行连续5层的气相生长.生长层中的Al的成分基本上与气相中的TMA和TMG的分压比成正比.在2cm×2cm的片子内几乎没有波动.有源层不掺杂,厚度为0.1μm时的阈
Japan's Sony Central Research Institute of organic compounds by thermal decomposition of the vapor phase growth method, made in the visible light can be obtained at room temperature continuous oscillation of the semiconductor laser. The shortest continuous wavelength at room temperature for the 760nm. Crystal growth, the use of trimethyl gallium [ TMG], trimethylaluminum [TMA], AsH 3, and the substrate is Ga-doped Te. The substrate temperature is about 700 ° C., and 5 continuous layers are formed at a growth rate of about 0.2 μm / min Vapor growth The composition of Al in the growth layer is substantially proportional to the partial pressure ratio of TMA and TMG in the gas phase with little fluctuation in the film of 2 cm × 2 cm The active layer is undoped at a thickness of 0.1 μm threshold