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本文叙述用本所1.2米回旋加速器产生的氘子,利用~(10)B(d,n)~(11)C,~(11)B(d,2n)~(11)C,~(12)C(d,n)~(13)N和~(14)N(d,n)~(15)O核反应,同时测定半导体硅中痕量的硼、碳和氮。样品辐照后,采用惰性气体熔融法作快速放化分离,~(11)C、~(13)N和~(15)O分别吸收在烧碱石棉、液氮冷却的5A分子筛和650℃的Hopcalite试剂上,用γ-γ符合测量装置测量各产核的湮灭γ计数,用相对定量法可同时得到硅中约几十ppb的硼、碳、氮含量。相对标准偏差分别为:C<±50％,B<±20％,N<±50％。 方法简单、快速且灵敏度高,是鉴定硅材料中轻元素含量的一个好方法。
In this paper, the deuterium generated by the cyclotron of 1.2 m in this paper is described, and the deuterium ions generated by ~ (10) B (d, n) ~ (11) C, Determination of trace amounts of boron, carbon and nitrogen in semiconductor silicon by C (d, n) ~ (13) N and ~ (14) N (d, n) ~ (15) O nuclei. After the sample was irradiated, inert gas was used for rapid radiochemical separation. ~ (11) C, ~ (13) N and ~ (15) O were absorbed on calcined asbestos, liquid nitrogen cooled 5A molecular sieve and 650 ℃ Hopcalite Reagents, with γ-γ coincidence measuring device measured nuclear annihilation γ count, with the relative quantification method can be obtained at about the same silicon in dozens of ppb of boron, carbon, nitrogen content. The relative standard deviations were: C <± 50%, B <± 20%, N <± 50%. The method is simple, rapid and sensitive, and is a good way to identify the light elemental content in silicon materials.