一、引言目前正在发展的Ⅲ-Ⅴ族化合物半导体器件如FET,激光器和太阳电池等用的材料均要求多层、异质和p-n结等结构,而常用的C-V法和Hall法不能同时测定这类材料的载流子浓度,厚度和p-n结位置.在这方面电化学法已取得一定的成功.但异质结材料的载流子浓度分布和p-n结位置等测试尚未见报道.本文以太阳电池材料为典型例子,研究了它的电化 I. INTRODUCTION At present, the materials for the III-V compound semiconductor devices such as FETs, lasers and solar cells all require multi-layer, heterogeneous and pn junction structures, while the commonly used CV and Hall methods can not simultaneously determine this The carrier concentration, the thickness and the position of the pn junctions in this kind of material have been obtained.However, the electrochemical method has achieved some success in this aspect.However, no reports have been reported on the carrier concentration distribution and pn junction location of the heterojunction materials.In this paper, Battery material is a typical example of its electrochemical