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本文报导全部应用常规工艺制造出45埃热氧化硅和200埃富硅氧化硅的双层栅氧化层MOS场效应晶体管。作者首次描述利用常规光刻技术,用BOE腐蚀液刻蚀双层氧化硅层。
This paper reports the complete fabrication of double gate oxide MOS field-effect transistors using 45 angstroms of thermal silica and 200 angstroms of silicon-rich silica using conventional processes. The authors first describe the use of conventional lithography techniques to etch a two-layer silicon oxide layer with BOE etchant.