A new silicon-based PbTiO3/Pb(Zr0.53 Ti0.47)O3/PbTiO3 sandwich structure is fabricated by a sol-gel method. Compared with other fabrication processes without PbTiO3 buffer layers, the annealing temperature is greatly reduced by as much as 100℃. Capacitance-voltage, polarization-electric field and dielectric-frequency properties of this sandwich structure are studied. The Pb(Zrx Ti1-x)O3 films are proved to have good dielectric and ferroelectric properties.