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中国物理学会于1965年4月19—27日在北京科学会堂召开了第三届全国半导体学术会议。参加这次会议的代表有来自全国各地的生产部门、研究机关和高等院校85个单位的代表167人。会议收到论文和工作报告161篇,宣读了129篇。这次会议涉及内容较广泛,质量也较高,代表们认为这些论文比较全面地反映了我国半导体研究工作的现状。综述会议论文,可概括以下三方面: 1.半导体物理的研究有了新的进展。论文的内容涉及到寿命的测量和研究、表面物理、能带和
The Chinese Society of Physics held the Third National Conference on Semiconductors at the Beijing Science Hall on April 19-27, 1965. The representatives attending the conference included 167 representatives from 85 units of production departments, research institutes and institutions of higher learning all over the country. Meeting received 161 papers and reports, read 129 articles. The meeting covered a wide range of content, high quality, the representatives believe that these papers more fully reflect the status quo of China's semiconductor research work. Summarizing conference papers, we can summarize the following three aspects: 1. New progress has been made in the research of semiconductor physics. Papers related to life-span measurement and research, surface physics, energy band and