A-plane GaN films are deposited on (302) \gamma-LiAlO2 substrates by metalorganic chemical vapor deposition (MOCVD). The X-ray diffraction (XRD) results indicate that the in-plane orientation relationship between GaN and LAO substrates is [010]LAO//[0001
A four-level tripod active-Raman-gain scheme is analyzed for obtaining phase-controlled gain, phase shift, and group velocity at room temperature. The scheme can be used to eliminate significant probe field attenuation or distortion which is unavoidable i