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为研究MEMS静电驱动器的场电子发射效应,设计并加工了排斥驱动器和平行板驱动器两种不同结构的静电驱动器,实验测试了电极间漏电流随驱动电压的变化关系,验证了其满足场发射效应的FN理论公式,从而首次观察到静电排斥驱动器的场致电子发射效应。根据测试结果计算得到了所设计的两种MEMS静电驱动器的名义发射面积和场增强因子。由于器件自身的结构设计特征,平行板驱动器相对于排斥驱动器具有更大的名义发射面积和更小的场增强因子。
In order to study the field electron emission effect of MEMS electrostatic actuator, two different structures of electrostatic actuator, repelling driver and parallel plate driver, were designed and fabricated. The relationship between the leakage current and the driving voltage was experimentally tested and verified that it satisfies the field emission effect FN theoretical formula, and thus for the first time to observe the electrostatic field exclusion drive field electron emission effect. Based on the test results, the nominal emission area and field enhancement factor of two kinds of MEMS electrostatic actuators are calculated. Due to the device’s own structural design features, the parallel plate driver has a larger nominal emission area and a smaller field enhancement factor than the repelling driver.