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对最基本的场板结构 ,通过理论推导 ,深入讨论了场板下氧化层厚度与击穿电压、氧化层玷污所带正电荷电量之间的关系 ;又给出了场板长度值与击穿电压和P+区结深之间的关系 .为VDMOSFET的结构设计和工艺实施提供了理论的依据
For the most basic field plate structure, the relationship between the thickness of the oxide under the field plate and the breakdown voltage and the charge of the positive charge on the oxide layer is deeply discussed through the theoretical derivation. The field plate length and breakdown The relationship between the voltage and the junction depth of the P + region provides a theoretical basis for the structural design and implementation of the VDMOSFET