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本文报导了在分子束外延(MBE)生长的沟道层上制作的“T”形Ti/W/Au栅GaAs肖特基势垒场效应晶体管的噪声性能。标称栅长约为0.7μm,总栅宽250μm。典型噪声系数和相应增益在4GHz下分别为1.2dB和14dB;在12GHz下分别为1.9dB和8.5dB。据我们所知,这些值是关于用MBE生长的GaAs制作的器件迄今所报导的最好结果。这些初步结果表明MBE用于高质量的GaAsFET是很有希望的。
This paper reports the noise performance of a “T” shaped Ti / W / Au GaAs Schottky barrier field effect transistor fabricated on a MBE grown channel layer. The nominal gate length is about 0.7μm and the total gate width is 250μm. The typical noise figure and corresponding gain are 1.2dB and 14dB respectively at 4GHz and 1.9dB and 8.5dB respectively at 12GHz. To the best of our knowledge, these values are the best reported results to date on devices made from GaAs grown with MBE. These preliminary results show that MBE is promising for high quality GaAsFETs.