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进一步研究了提高硅单晶的质量,取得了良好的结果。采用减压拉晶工艺,研究炉室内气体运动状态,调节氩气流量,及时有效地排除反应产物,碳的含量得到了显著的降低,多数单晶样品的碳含量≤5×0~(16)/厘米~3。系统地研究了消除旋涡缺陷的途径。设计出一个梯度适宜、热对称性良好的温度场,合理选择晶体生长参数,获得近似平坦而微凹的结晶前沿,注意氧含量的控制,能够做到90%以上的 P 型〈111〉,〈100〉单晶为无旋涡缺陷。无旋涡缺陷单晶生长工艺有助于单晶径向电阻率均匀性的改善,径向电阻率不均匀度一般均可≤8%。
Further study to improve the quality of silicon single crystal, and achieved good results. The content of carbon in the single-crystal samples was significantly lower than 5 × 0 ~ (16), and the content of carbon in the single-crystal samples was less than 5 × 0 ~ (16) / Cm ~ 3. Systematically studied the elimination of vortex defects approach. A suitable temperature gradient with good thermal symmetry is designed, and the crystal growth parameters are reasonably selected to obtain a nearly flat and slightly concave frontier of crystallization. Pay attention to the control of oxygen content and can achieve more than 90% of P type <111>, < 100> single crystal is a vortex-free defect. Single crystal growth without vortex defects contribute to the improvement of single crystal radial resistivity uniformity, the radial resistivity nonuniformity can generally ≤ 8%.