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无支撑优质金刚石膜在微波真空器件和光学器件中的广泛应用,有赖于制备成本的下降和工艺的完善。结合微波等离子体化学气相沉积(MPCVD)金刚石膜的工艺研究结果,本文就沉积速率、晶面取向以及内应力的相关问题进行了初步探讨。对于给定的设备,沉积速率与多种因素有关,包括膜的质量、膜厚均匀性和有效沉积面积、以及形核的密度。在通常情况下,金刚石膜呈(111)择优取向,而样品位置下移5mm后,观察到(100)取向。对内应力的初步研究表明,CH4/H2比例较低(1.5)时,金刚石膜的内应力趋向于压应力,而(100)取向的出现则有助于使内应力降到最低。
The wide application of unsupported high quality diamond films in microwave vacuum devices and optics depends on the reduction of fabrication costs and the improvement of the process. Combining with the research results of the diamond film by microwave plasma chemical vapor deposition (MPCVD), this paper discussed the deposition rate, crystal plane orientation and internal stress. The deposition rate for a given device depends on a number of factors including film quality, uniformity of film thickness and effective deposition area, and density of nucleation. Under normal conditions, the diamond film is preferentially oriented at (111), while the (100) orientation is observed after the sample position is lowered by 5 mm. Preliminary studies on internal stress show that the internal stress of diamond films tends to compressive stress when the CH4 / H2 ratio is low (1.5), while the appearance of (100) orientation helps to minimize the internal stress.