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用液体包封技术通过缩晶的手段已能生长无位错砷化镓单晶。已经发现晶体直径的缩细是降低位错的主要措施。熔体组分的化学配比不一定要很严格;只要它能充分维持一个合适的生长速率即可。接近固液交界面必须有一个低的温度梯度,而且这个低温度梯度可以由三氧化二硼包封层的本身来获得。三氧化二硼熔体不一定产生位错。单晶是在〔111〕以及〔100〕方向生长的。分别通过腐蚀(111)-Ga 面和(100)面来观察位错。发现籽晶的所有位错都是从缩颈部分向着晶体的表面消失。
Displacement-free gallium arsenide single crystals have been able to grow by liquid-encapsulation techniques by crystal shrinkage. Narrowing of the crystal diameter has been found to be the primary measure for reducing dislocations. The chemical composition of the melt component does not have to be rigorous; as long as it adequately maintains a suitable growth rate. There must be a low temperature gradient near the solid-liquid interface, and this low temperature gradient can be obtained by the boron trioxide encapsulation itself. Boron trioxide melt does not necessarily generate dislocations. Single crystals are grown in [111] and [100] directions. Dislocations were observed by etching the (111) -Ga surface and the (100) surface, respectively. All the dislocations of the seed crystals were found to disappear from the constricted part towards the crystal’s surface.