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For operation and manipulation with nanometric positioning precision,an integrated micro nano-positioning xy-stage is developed,which is mainly composed of a silicon-based xy-stage,comb-driven actuator and displacement sensor.The high-aspect-ratio comb-driven xy-stage is achieved by deep reactive ion etching (DRIE) in both sides of wafer.The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge.A simple vertical sidewall surface piezoresistor process which improves on the basis of the conventional surface piezoresistor technique is proposed.The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique.The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV/μm without amplification and the linearity is better than 0.814%.Under 30 V driving voltage,a ±10 μm single-axis displacement is measured without crosstalk.The displacement resolution of the micro xy-stage is better than 10.8 nm.
For operation and manipulation with nanometric positioning precision, an integrated micro nano-positioning xy-stage is developed, which is mainly composed of a silicon-based xy-stage, comb-driven actuator and displacement sensor. High-aspect-ratio comb- driven xy-stage is achieved by deep reactive ion etching (DRIE) in both sides of wafer. The displacement sensor is mainly composed of four vertical sidewall surface piezoresistor connected to form a full Wheatstone bridge. A simple vertical sidewall surface piezoresistor process which improves the basis of the conventional surface piezoresistor technique is proposed. The experimental results verify the integrated micro nano-positioning xy-stage including the vertical sidewall surface piezoresistor technique. The sensitivity of the fabricated piezoresistive sensors is better than 1.17 mV / μm without amplification and the linearity is better than 0.814% .Under 30 V driving voltage, a ± 10 μm single-axis displacement is measured without cross talk. The displacement resolution of the micro xy-stage is better than 10.8 nm.