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报道了采用超声雾化喷涂工艺沉积优质掺杂二氧化锡透明导电半导体薄膜的实验成果 ,选用氟作为掺杂元素 ,通过改变掺杂量和工艺参数 ,可控制薄膜的方块电阻在 1 0 Ω/□以上的范围内变化 (40 0 nm膜厚 ) ,掺氟离子二氧化锡为 n型导电半导体 ,高浓度掺杂的二氧化锡薄膜光学透过率为 87%～ 90 % (采用 550 nm单色光源测透过率 )。用 X射线衍射及扫描电子显微镜分析 ,可获得该薄膜材料的微结构、表面形貌以及薄膜组成、掺杂百分含量。该成果为大规模生产优质二氧化锡透明导电薄膜 ,提供了有效、简单的方法和装置。
The experimental results of using ultrasonic atomizing spray deposition to deposit high-quality transparent conductive semiconductor thin films of tin dioxide were reported. Fluorine was chosen as the doping element. By changing the doping amount and process parameters, the sheet resistance of the thin film was controlled at 1 0 Ω / □ Change in the above range (40 0 nm film thickness), fluoride-doped tin dioxide is an n-type conductive semiconductor, and the optical transmittance of the high-concentration doped tin oxide film is 87% to 90% Color light transmittance). By X-ray diffraction and scanning electron microscopy analysis, the microstructure, surface morphology and film composition, doping percentage content of the film material can be obtained. This achievement provides an efficient and simple method and apparatus for the mass production of high quality tin dioxide transparent conductive films.