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离子束刻蚀是近年来发展起来的微细加工工艺。由于它的超精细加工能力等特点,已在微电子技术、光子技术,表面科学、应用声学、材料科学和真空技术等领域中得到广泛的应用。本文采用的束流密度为0.5(mA·cm~(-2)),能量分别为600eV 和1100eV 垂直入射的氩离子束对半导体单晶硅片(111)面上宽度分别为200、80,30、10、8(μm)的沟槽进行刻蚀,用扫描电子显微镜拍摄记录不同时刻的沟槽台阶形貌。考虑到溅出的靶原子在空间的各种不同分布,建立了重新淀积理论,并对实验结果作了完满的解释。
Ion beam etching is the development of micro-processing technology in recent years. Because of its ultra-fine processing capabilities and other characteristics, has been widely used in microelectronics, photonics, surface science, applied acoustics, materials science and vacuum technology. In this paper, the beam density of 0.5 (mA · cm ~ (-2)) and argon ion beams with energy of 600eV and 1100eV respectively were used to measure the widths of the semiconductor single crystal silicon wafer (111) , 10,8 (μm) trench etching, using a scanning electron microscope to record the groove at different times to record the topography. Considering the different spatiotemporal distribution of spattered target atoms, a theory of re-deposition was established and the experimental results were fully explained.