We characterized the dependence of the timing jitter of an InGaAs/InP single-photon avalanche diode on the excess bias voltage(V_(ex)) when operated in 1-GHz sinusoidally gated mode.The single-photon avalanche diode was cooled to-30 degrees Celsius.When the V_(ex) is too low(0.2 V-0.8 V) or too high(3 V-4.2 V),the timing jitter is increased with the V_(ex),particularly at high V_(ex).While at middle V_(ex)(1 V-2.8 V),the timing jitter is reduced.Measurements of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the V_(ex) and the width of the gate-on time.For the 1-GHz sinusoidally gated detector,the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4%and a dark count rate of ~2.08×10~(-5) per gate at the V_(ex) of 2.8 V.To evaluate the whole performance of the detector,we calculated the noise equivalent power(NEP) and the afterpulse probability(P_(ap)).It is found that both NEP and P_(ap) increase quickly when the V_(ex) is above 2.8 V.At ~2.8-V V_(ex),the NEP and P_(ap) are ~2.06×10~(16)W/Hz~(1/2) and 7.11%,respectively.Therefore,the detector should be operated with V_(ex) of 2.8 V to exploit the fast time response,low NEP and low P_(ap). We characterized the dependence of the timing jitter of an InGaAs / InP single-photon avalanche diode on the excess bias voltage (V_ (ex)) when operated in 1-GHz sinusoidally gated mode. The single-photon avalanche diode was cooled to -30 degrees Celsius. If the V_ (ex) is too low (0.2 V - 0.8 V) or too high (3 V - 4.2 V), the timing jitter is increased with V_ (ex), particularly at high V_ (ex). While at middle V ex (1 V -2.8 V), the timing jitter is reduced. Measurement of the timing jitter of the same avalanche diode with pulsed gating show that this effect is likely related to the increase of both the amplitude of the V_ (ex) and the width of the gate-on time. For the 1-GHz sinusoidally gated detector, the best jitter of 93 ps is achieved with a photon detection efficiency of 21.4% and a dark count rate of ~ 2.08 × 10 ~ (-5) per gate at the V_ (ex) of 2.8 V. To evaluate the whole performance of the detector, we calculated the noise equivalent power (NEP) and the afterpulse probability (P_ (ap)). It is found th at both NEP and P_ (ap) increase quickly when V_ (ex) is above 2.8 V.At~2.8-V V_ex, the NEP and P ap are ~ 2.06 × 10~16 W / Hz ~ (1/2) and 7.11% respectively. The detector should be operated with V_ (ex) of 2.8 V exploit the fast time response, low NEP and low P_ (ap).