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本文采用基片可旋转并利用红外灯管加热基片多靶磁控溅射台的制备了不同成分及基片温度的Ag～Sio2复合薄膜。采用XRD、TEM、SEM等手段分析了薄膜的微观组织结构，并测定了薄膜的电阻率。研究结果表明：复合薄膜的微结构由多晶富Ag区和细密的Ag晶体和非晶SiO2混合物组成；室温下随SiO2含量的增加．薄膜中金属Ag呈网状分布．晶粒细化，电阻率上升；随基片温度的升高．复合薄膜中银晶体最终聚集成孤立的纳米颗粒；与微结构相对应，薄膜的电阻率可在大范围（102～106μΩcm）内变化。
In this paper, Ag ~ Sio2 composite films with different composition and substrate temperature were prepared by rotating the substrate and heating the multi-target magnetron sputtering substrate with infrared lamp. The microstructure of the films was analyzed by XRD, TEM and SEM. The resistivity of the films was also measured. The results show that the microstructure of the composite film is composed of polycrystalline Ag-rich region, fine Ag crystal and amorphous SiO2 mixture. With the increase of SiO2 content at room temperature, The film of metal Ag was reticular distribution. Grain refinement, resistivity increases; with the substrate temperature increases. The silver crystals in the composite films eventually aggregate into isolated nanoparticles; corresponding to the microstructure, the resistivity of the films can vary over a wide range (102-106 μΩcm).