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目前,对HEMT逻辑单元电路的模拟分析基本上是基于SPICE模型,采用曲线拟合及参数提取等方法完成,较难从模拟结果直接获得有关器件物理参数与电路性能指标,给HEMT高速IC逻辑设计带来了困难。本研究进行了HEMT门特性的理论分析,提出了模拟HEMT DCFL倒相器直流传输特性及瞬态特性的新模型,并进行了计算机模拟。 在进行直流传输特性模拟时,讨论了电压传输过程中三个不同的工作区,利用K.Park提出的HEMT I—V特性模型,可得到各区输入与输出电压关系,即可完整地模拟出HEMT DCFL倒相器的直流传输特性,克服了C.H.Hyun模型中仅能模拟过渡区的缺陷。另外,还计算了负载管阈电压和源电阻对传输特性的影响。 Hyun简单地运用了导电机理不同于HEMT的GaAs无栅FET饱和电流表达式计算延迟时间,带来了一定的误差,本研究仍使用K.Park的I—V特性模型计算负载管导通电流,较为正确地计算出延迟时间与驱动管栅宽、负载管阈电压及电源电压的关系。 由于模型将器件的物理参数与电路性能指标有机结合,且较为全面地考虑了影响倒相器特性的诸因素,故较好地指导了HEMT IC的设计。
At present, the simulation analysis of HEMT logic cell circuit is basically based on the SPICE model, and the method is performed by curve fitting and parameter extraction. It is difficult to directly obtain the physical parameters and circuit performance index of the device from the simulation results, Brought difficulties. In this study, the theoretical analysis of the HEMT gate characteristics was carried out. A new model of DC transmission and transient characteristics of the HEMT DCFL inverter was proposed, and the computer simulation was carried out. During the simulation of DC transmission characteristics, three different work areas during voltage transmission are discussed. By using the HEMT I-V characteristic model proposed by K. Park, the relationship between input and output voltages in each area can be obtained and the HEMT DCFL inverter DC transmission characteristics to overcome the CHHyun model can only simulate the transition zone defects. In addition, the influence of load tube threshold voltage and source resistance on the transmission characteristics is also calculated. Hyun simply used the conduction mechanism is different from the HEMT GaAs gate-free FET saturation current expression of the calculation of the delay time, bringing some errors, the study is still using K. Park I-V characteristic model load tube conduction current, Calculate the relationship between the delay time and gate width, load-tube threshold voltage and supply voltage more correctly. As the model of the physical parameters of the device and circuit performance indicators organically integrated, and more comprehensive consideration of the factors that affect the inverter characteristics, it is better to guide the HEMT IC design.