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The exponential dependence of the potential barrier heightφ_c on the biased voltages of the inorganic/organic static induction transistor(SIT/OSIT) through a normalized approach in the low-current regime is presented.It shows a more accurate description than the linear expression of the potential barrier height.Through the verification of the numerical calculated and experimental results,the exponential dependence ofφ_c on the applied biases can be used to derive theⅠ-Ⅴcharacteristics.For both SIT and OSIT,the calculated results,using the presented relationship,are agreeable with the experimental results.Compared to the previous linear relationship,the exponential description ofφ_c can contribute effectively to reduce the error between the theoretical and experimental results of theⅠ-Ⅴcharacteristics.
The exponential dependence of the potential barrier height φ_c on the organic voltage of the inorganic / organic static induction transistor (SIT / OSIT) through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence ofφ_c on the applied biases can be used to derive theⅠ-Ⅴcharacteristics.For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description ofφ_c can contribute effectively to reduce the error between the theoretical and experimental results ofⅠ-Ⅴcharacteristics.