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研究常压淀积后4200A磷掺杂的多晶硅膜厚作为淀积速率的关系。利用电子微探针分析测定建立了淀积速率和多晶硅膜中氧含量之间的关系。从而说明淀积速率对膜的电特性和晶粒大小的影响。对于淀积速率低于400A/分的膜研究了氧含量大约是膜重量的1％,重量比约为1％的浓度的氧含量在高温过程中抑制晶粒生长,并且由于对膜性能的影响载流子浓度和(?)耳迁移率下降而使方块电阻增加。
The relationship between deposition rate and deposition rate of 4200A phosphorus-doped polycrystalline silicon film was investigated after atmospheric pressure deposition. The relationship between the deposition rate and the oxygen content in the polysilicon film was established by electron microprobe analysis. The effect of deposition rate on the electrical properties and grain size of the film was thus demonstrated. For films with a deposition rate of less than 400 A / min. Oxygen levels of about 1% by weight of the film and about 1% by weight of the film were studied to inhibit grain growth during high temperature and due to the effect on the film properties Carrier resistance and Î “Δ mobility decreased and the box resistance increased.