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The nuclear detectors of semiconductor germanium and silicon are widely used in nuclear radiation detect, which have a small volume, a short rise time, and a high energy resolution. But the germanium and silicon materials have the narrow forbidden energy gap (Ge:Eg= 0. 665 eV, Si:Eg=1.12 eV) and atomic number (Ge:Z=32, Si:Z=14). Therefore, they have the limitation in applications. The gallium arsenic material has the preponderance of wide forbidden energy gap(Eg=1.45 eV and high atomic number (ZGa=
The nuclear detectors of semiconductor germanium and silicon are widely used in nuclear radiation detect, which have a small volume, a short rise time, and a high energy resolution. But the germanium and silicon materials have the narrow forbidden energy gap (Ge: Eg = 0.665 eV, Si: Eg = 1.12 eV) and atomic number (Ge: Z = 32, Si: Z = 14). Thus, they have the limitation in applications. The gallium arsenic material has the preponderance of wide forbidden energy gap (Eg = 1.45 eV and high atomic number (ZGa =