难熔金属及其硅化物在MOS电路中作为栅极材料获得了重要的应用。它与自对准新工艺相容,并且具有比多晶硅低得多的电阻率。我们采用难熔金属钼作为CMOS集成电路的栅极材料。这里着重介绍钼的高频溅射淀积和反应离子刻蚀,对反应离子刻蚀的终点检测也作一些初步的介绍。 Refractory metals and their silicides have gained important applications as gate materials in MOS circuits. It is compatible with self-aligning new processes and has a much lower resistivity than polysilicon. We use refractory metal molybdenum as CMOS integrated circuit gate material. Here highlight the high-frequency sputtering molybdenum deposition and reactive ion etching, reactive ion etching endpoint detection also make some preliminary introduction.