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Zn0.93Co0.07O thin films infiltrated with nitrogen and aluminum were prepared by means of magneton sputtering. The structural and magnetic properties of the films were studied systematically. The materials were single phase (wurtzite structure) with surfaces showing signs of homogeneous growth. The films were ferromagnetic at room temperature, and magnetic domains could be clearly observed on the surfaces. In the case of Al infiltration, saturated magnetization increased with Al concentration increasing; whereas in the case of N infiltration, saturated magnetization decreased with the increase in N concentration. The results show that ferromagnetic interactions in Co-doped ZnO diluted magnetic semiconductor may be transferred by electrons.
The structural and magnetic properties of the films were studied systematically. The structural characteristics of the films were studied systematically. The materials were single phase (wurtzite structure) with surfaces showing signs of homogeneous growth. The films were ferromagnetic at room temperature, and magnetic domains could be clearly observed on the surfaces. In the case of Al infiltration, saturated magnetization increased with Al concentration increasing; while in the case of N infiltration, saturated magnetization decreased with the increase in N concentration The results show that ferromagnetic interactions in Co-doped ZnO diluted magnetic semiconductor may be transferred by electrons.