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一.引言近年来国内外对氮化物的研究比较活跃,因为氮化物具有许多独特的优点。例如TiN、TaN、si×Ny等膜的性能稳定,硬而且耐腐蚀,TaN和TiN呈金黄色,可做装饰品,是引人注目的新材料。氮系Ⅲ—Ⅱ族化合物GaN、TnN是低阻材料,可以制做发光器件。高阻氮化铝是人们最感兴趣的氮化物之一,它具有高的声速(6×10~3M/s)、大的压电耦合系数(K~2％=0.8)、禁带宽度大(6.0～6.3ev),化学和热稳定性好,绝缘强度高(电阻
I. Introduction In recent years, domestic and foreign research on nitride more active, because the nitride has many unique advantages. For example, films such as TiN, TaN, si × Ny have stable properties, hard and corrosion-resistant, and are yellow-gold-colored TaN and TiN. They are attractive new materials. Nitrogen Ⅲ-Ⅱ compounds GaN, TnN is a low resistance material, can be made of light-emitting devices. High-resistivity aluminum nitride is one of the most interesting nitrides. It has high sound velocity (6 × 10-3M / s), large piezoelectric coupling coefficient (K ~ 2% = 0.8), large forbidden band width (6.0 ~ 6.3ev), chemical and thermal stability, high dielectric strength (resistance