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通过测量基频光波长为１．０６４μｍ时几个不同掺杂类型和掺杂浓度的Ｓｉ（１００）（２×１）样品表面反射二次谐波强度随温度的变化关系，说明在此波长上二次谐波不是来源于表面耗尽场的影响，而是来源于表面态电子。Ｓｉ（１００）（２×１）表面反射二次谐波强度反比于温度的平方。本文提出了一个简单模型，给出了初步解释。
By measuring the fundamental frequency of 1.064μm when several different doping types and doping concentration of Si (100) (2 × 1) sample surface reflection second harmonic intensity with temperature changes, indicating that at this wavelength The second harmonic is not derived from the depletion of the surface field, but from the surface state electrons. The Si (100) (2 × 1) surface reflects the second harmonic intensity inversely proportional to the square of the temperature. This paper presents a simple model, gives a preliminary explanation.