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采用直流磁控溅射工艺,使用掺铝氧化锌(AZO)陶瓷靶,在玻璃基底上制备出具有c轴择优取向的AZO透明导电薄膜。运用共焦显微拉曼光谱仪对AZO陶瓷靶的微结构进行了表征,对在不同基底温度下沉积出来的薄膜运用扫描电子显微镜(SEM)、X射线衍射(XRD)、紫外-可见光分光光度计和四探针测试仪等分别进行了结构和光电特性的表征。结果表明,随着基底温度的升高,AZO薄膜的晶粒逐渐增大,c轴择优取向加强,结晶状况变好;AZO薄膜的吸收边发生蓝移,折射率降低,而薄膜厚度则有所增加,光学禁带宽度增大;AZO薄膜的电阻率降低,但在基底温度达到350℃后电阻率就趋于稳定。
A DC magnetron sputtering process was used to fabricate a AZO transparent conductive film with a preferred c-axis orientation on a glass substrate using a zinc-doped aluminum oxide (AZO) ceramic target. The microstructures of AZO ceramic targets were characterized by confocal Raman microscope. The films deposited at different substrate temperatures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), UV-visible spectrophotometer, Probe tester, respectively, the structure and the photoelectric characterization. The results show that with the increase of the substrate temperature, the grain size of the AZO thin film increases gradually, the c-axis preferred orientation becomes stronger and the crystallization condition becomes better. The absorption edge of the AZO thin film shifts blue and the refractive index decreases, while the film thickness Increases, and the optical band gap increases. The resistivity of AZO thin film decreases, but the resistivity tends to stabilize when the substrate temperature reaches 350 ℃.