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通过采用光辐射加热悬浮区熔法制备了Tb5Si3单晶。得出的结论为:3 mm/h的生长速度,0.1 MPa的循环氩气比较适合Tb5Si3单晶体的生长;Tb5Si3单晶基体内容易产生定向Tb5Si4脱溶沉淀相。调整材料成分可明显减少Tb5Si3相沉淀的尺寸和数量,提高制备晶体的完整性。
The Tb5Si3 single crystal was prepared by heating the suspension zone by optical irradiation. The conclusion is: the growth rate of 3 mm / h, 0.1 MPa cyclic argon is more suitable for the growth of Tb5Si3 single crystal; Tb5Si3 single crystal matrix is easy to produce oriented Tb5Si4 desolventive precipitation phase. Adjust the material composition can significantly reduce the size and the amount of precipitation Tb5Si3 phase, improve the integrity of the preparation of the crystal.