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在反向偏压下,测试时所用的高频小信号频率超过一定值后,GM型探测器结电容测试值将下降。本文讨论了频率对CV特性影响的实验结果,并分析了其原因。指出最高可用的阈值频率f_(th)取决于半导体耗尽区中的场强E。文中给出f_(th)与E以及与电阻率和电压间的实验关系式,室温下f_(th)可达1—4MH_z。
Under reverse bias, when the frequency of the high-frequency small signal used in the test exceeds a certain value, the test value of the junction capacitance of the GM type detector will decrease. This paper discusses the experimental results of the influence of frequency on the CV characteristics and analyzes the reasons. It is pointed out that the highest available threshold frequency f_ (th) depends on the field strength E in the semiconductor depletion region. The experimental data of f_ (th) and E and the relationship between resistivity and voltage are given in the paper. The f_ (th) can reach 1-4MH_z at room temperature.