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利用Au催化辅助化学气相沉积生长技术,在nSi(111)衬底上制备了准单晶的ZnO纳米线。X射线衍射分析的结果表明,ZnO纳米线具有明显的沿(0001)方向定向生长的特征。扫描电子显微镜分析表明,ZnO纳米线的典型直径约为100nm,长度为2～5μm。讨论了Au催化辅助化学气相沉积生长技术制备ZnO纳米线的原理。
Quasi-single crystal ZnO nanowires were prepared on nSi (111) substrates by Au-assisted chemical vapor deposition growth. The results of X-ray diffraction analysis show that the ZnO nanowires have obvious directional growth along the (0001) direction. Scanning electron microscopy analysis showed that ZnO nanowires typically have a diameter of about 100 nm and a length of 2 to 5 μm. The principle of preparing ZnO nanowires by Au-catalyzed assisted chemical vapor deposition growth is discussed.