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薄膜在热处理过程中存在微观结构的变化。利用光学显微镜对非晶态Ｓｅ薄膜在晶化过程中微裂纹的产生做了详细的分析和研究；利用位形坐标解释了非晶薄膜室温下转变的原因。并对三层结构的ＳｉＯ／Ｓｅ／ＳｉＯ的晶化做了进一步研究。结果表明微裂纹的产生与晶化过程中原子重新排序、原子迁移导致晶界的产生和体积收缩产生的应力有关，裂纹的产生还同薄膜与衬底间的热失配有关。
The microstructure of the film during the heat treatment changes. The formation of microcracks during the crystallization process of amorphous Se films was analyzed by optical microscope. The reason of the transition of amorphous films at room temperature was explained by the position coordinates. The crystallization of SiO / Se / SiO with three layers was further studied. The results show that the generation of microcracks is related to the reordering of atoms in the crystallization process and the migration of atoms resulting in the formation of grain boundaries and the stress caused by volumetric shrinkage. The generation of cracks is also related to the thermal mismatch between the film and the substrate.