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采用直流电弧放电方法利用硼碳复合棒成功合成了硼掺杂富勒烯，质谱和Ｘ射线光电谱等分析手段证实我们制备的硼掺杂富勒烯主要是以Ｃ５９Ｂ和Ｃ６９Ｂ形式存在；对硼掺杂富勒烯薄膜样品在４９３Ｋ 进行了真空退火，并测量了电导率随温度的变化关系．发现硼掺杂富勒烯膜的电导激活能减小，室温电导率比未掺杂富勒烯膜高三个量级，同时硼掺杂富勒烯膜依然表现出明显的半导体特性
Boron-doped fullerenes were successfully synthesized by DC arc discharge method using boron-carbon composite rods. The results of mass spectrometry and X-ray photoelectron spectroscopy confirmed that the boron-doped fullerenes we prepared were mainly in the form of C59B and C69B. Doping fullerene film samples were vacuum annealed at 493K, and the conductivity was measured with temperature. It is found that the conductance activation energy of the boron-doped fullerene film decreases, the conductivity at room temperature is three orders of magnitude higher than that of the undoped fullerene film, and the boron-doped fullerene film still shows obvious semiconductor characteristics