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ZnO发光二极管(LEDs)在照明应用方面有着巨大的潜力。需要解决的主要问题是光的产生和对辐射的控制,这个问题来自LED波长的变化和组合。发现缺陷发光的ZnO有着各种波长范围,适合LED在白光产生方面的应用。同时展示了在实验和理论上可以用于ZnO系统的缺陷辐射。这种类型的缺陷相较于传统的掺杂材料和其他材料,其优点在于不需要广泛和昂贵的生产系统。不仅提出了ZnO薄膜在白色平面LED光源本征缺陷发光的潜在应用,同时也利用一些方法一个特定的中心位置和ZnO薄膜在初期发射谱带的宽分布来控制缺陷的产生。根据不同的制备方法和特定的实验条件,不同的白色,如稍白色和青白色等原本的和重要的颜色-蓝光波段(455,458nm),绿光波段(517,548nm),红光波段(613,569nm)分别被获得。从而说明了这是一种制作白光LED更好的办法-利用ZnO材料。在对ZnO薄膜电学性质的调查研究中,通过薄膜表面的额电子插入和正离子的湮灭已经证明了的观点,随着质子的植入、正离子的湮没、电子的插入和ZnO表面的电学性质的研究,表述结果被进一步的证实。研究人员对单晶ZnO的已经有了一定的研究,PL质子植入ZnO以后呈现橘红色,并且在700℃退火后仍然存在,清楚的可以看出PL缺陷的存在。在植入粒子方面最近的文章也有报道,例如在ZnO缺陷表层中注入离子和电子来改变PL性能。VZn也发现了氧化锌薄膜的主要缺陷之一是正电子湮没,同样的,Vlasenko和Watkins也发现了氧化锌表面由于电子辐射产生的缺陷。导致绿色透光率的减少,增加PL致600~700nm。之后分析和解释ZnO薄膜电阻率的缺陷。由霍尔系数的迹象表明ZnO表现为N型传导,这样做的原因是因为把VO和Zn原子联系在一起,使Zn具有较低的电阻率。试验中氧气退货可以增加ZnO的电阻率,其电阻率的增加是由于VO的减少。另外,在200℃条件下准备的样品导电率很低,说明了VO的作用很大。退火氧化锌薄膜电导率下降表明,看到了主要的缺陷。
ZnO light-emitting diodes (LEDs) have great potential for lighting applications. The main issues to be addressed are the generation of light and the control of radiation, a problem that comes from the variation and combination of LED wavelengths. The ZnO with defect luminescence has various wavelength ranges and is suitable for the application of LED in white light generation. At the same time, it shows the experimental and theoretical defect radiation that can be used in ZnO system. This type of defect has the advantage over traditional doping and other materials that no extensive and expensive production system is required. Not only the potential application of ZnO thin films on the intrinsic flaw of white planar LED light source but also the wide application of ZnO thin films at the initial emission band to control the defects has been proposed. According to different preparation methods and specific experimental conditions, different white colors such as blue and white (455,458 nm), green (517,548 nm), red (613,569 nm) ) Were obtained separately. This shows that this is a better way to make white LEDs - the use of ZnO materials. In the investigation of the electrical properties of ZnO thin films, it has been demonstrated by the frontal electron insertion and the annihilation of positive ions on the surface of the ZnO film that the annihilation of the positive ions, the insertion of electrons and the electrical properties of the ZnO surface Research, the results were further confirmed. Researchers have already studied ZnO single crystal. PL protons are orange-red after implantation of ZnO and still exist after annealed at 700 ℃. It is clear that PL defects exist. Recent articles on implanting particles have also been reported, such as implanting ions and electrons in the ZnO defect surface layer to change the PL properties. VZn also found that one of the major defects in zinc oxide films was positron annihilation. Similarly, Vlasenko and Watkins also found defects in zinc oxide surfaces due to electron radiation. Resulting in a decrease of green light transmittance, increasing PL to 600-700 nm. After analyzing and explaining the defects of ZnO thin film resistivity. The sign of the Hall coefficient shows that ZnO behaves as an N-type. This is done because the VO and the Zn atoms are linked together to make Zn have a lower resistivity. Oxygen return during the experiment can increase the resistivity of ZnO, the increase of resistivity is due to the decrease of VO. In addition, the sample prepared at 200 ° C has a low conductivity, indicating that VO plays a significant role. The decrease in conductivity of the annealed zinc oxide film shows that the major drawback is seen.