论文部分内容阅读
研究了Ni/HfO2(10 nm)/Pt存储单元的阻变特性和机理.该器件具有forming-free的性质,还表现出与以往HfO2(3 nm)基器件不同的复杂的非极性阻变特性,并且具有较大的存储窗口值(>105).存储单元的低阻态阻值不随单元面积改变,符合导电细丝阻变机理的特征.采用X射线光电子能谱仪分析器件处于低阻态时的阻变层HfO2薄膜的化学组分以及元素的化学态,结果表明,Ni/HfO2/Pt阻变存储器件处于低阻态时的导电细丝是由金属Ni导电细丝和氧空位导电细丝共同形成的.
The resistance change characteristics and mechanism of Ni / HfO2 (10 nm) / Pt memory cells were studied.The device has the properties of forming-free and exhibits complex non-polar resistance change from the conventional HfO2 (3 nm) (> 105). The low resistance of the memory cells does not change with cell area, which is in line with the characteristics of the resistance change mechanism of the conductive filaments.Using X-ray photoelectron spectroscopy The results show that the conductive filaments of Ni / HfO2 / Pt resistive memory device in the low resistance state are composed of metallic Ni conductive filaments and oxygen vacancy conductive The filaments form together.